Precessional switching of magnetic memory with perpendicular anisotropy polarizer.

Summary This thesis is devoted to the integration of a perpendicular anisotropy polarizer in a magnetic tunnel junction with planar magnetizations. By the effect of the spin transfer coming from the perpendicular polarizer, it is possible to induce oscillations of the magnetization of the free layer. These ultra-fast oscillations of the order of a picosecond, can be used as a writing mode in a magnetic MRAM cell. This type of writing is called precessional writing. We have optimized functional structures while keeping good electrical and magnetic qualities. Writing tests on nanopillars have validated the concept of precessional writing, thus opening a door to the understanding of the various phenomena related to tunneling and magnetization dynamics.